| Time：1140528 (Wed.) 14:20~16:20 Speaker：Prof.路克史密斯(Luke Smith) 國立成功大學物理學系/Department of Physics, National Cheng Kung University Title：Improving performance in two-dimensional materials-based transistors by contact engineering and surface oxidation Abstract： Two-dimensional (2D) materials have excellent potential for future electronics, enabling ultrathin transistors that surpass limitations of conventional silicon technology. Semiconducting transition metal dichalcogenide (TMD) materials are particularly appealing due to their appropriate bandgaps, but achieving low contact resistance transistors for p-type TMDs is a current challenge. I will present our recent advancements in contact engineering by combining surface oxidation for contact doping with transferred contact integration. We demonstrate a remarkable reduction in contact resistance of up to >30,000 times, limited by the doping density achieved by surface oxidation methods, highlighting the need for enhanced doping strategies for p-type WSe2. Additionally, to advance 2D CMOS architectures, i.e., incorporating both n- and p-type devices that function together, we introduce a straightforward method using surface oxidation and selective area patterning to fabricate 2D WSe2 p-n junctions, demonstrating functional CMOS inverters and rectifying behavior. These results highlight practical strategies for enhanced performance 2D electronics. Place：S101, Gongguan Campus, NTNU |
