| Time：1150408 (Wed.) 14:20~16:20 Speaker：Prof.黃彥霖(HUANG, Yen-Lin) 國立陽明交通大學材料科學與工程學系/Department of Materials Science and Engineering, National Yang Ming Chiao Tung University Title：Low-Power Electronics: Advancing SOT-MRAM and Low-Voltage Magnetoelectric Devices Abstract： With the escalating demand for energy-efficient electronics, the search for low-power memory and logic devices has become a central challenge in materials and devices research. This talk will present recent advances toward achieving both memory efficiency and enhanced device performance. I will begin with the 64-kb array level Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM), highlighting its potential to transform data storage through ultrafast operation and reduced current requirements. Particular attention is given to materials engineering strategies, including stabilization of β-tungsten, to improve spin Hall conductivity and manufacturability at scale. Beyond magnetic memory, we explore low-voltage multiferroic and ferroelectric devices, focusing on electrode design as a means to realize energy-efficient switching while mitigating imprint effects. Drawing on Landau-Devonshire theory and experimental studies of BiFeO3-based heterostructures, we illustrate how chemical doping, film thickness, and polarization control can be leveraged to tune functional properties. Together, these insights point to viable pathways for next-generation memory and computational architectures, offering unprecedented efficiency, scalability, and integration potential. Place：S101, Gongguan Campus, NTNU |
