2024 Boson Club Bor-Wei Liang (Taiwan Semiconductor Research Institute)-1130312

Time:1130312 (Tues.) 13:20~16:10
Speaker:Bor-Wei Liang
Associate Research Fellow, Device Technology Division, Taiwan Semiconductor Research Institute
Title:Multifunctional transistor based on 2D materials van der Waals heterostructures
Abstract:Two-dimensional materials exhibit atomic-level smoothness and clean interfaces, along with unique photoresponse characteristics. By stacking various 2D materials to form van der Waals heterostructures, additional degrees of freedom are provided for the integration of multifunctional devices. In the presentation, I will briefly introduce how a vertical hot electron transistor, based on a heterostructure formed by stacking multiple 2D materials, can achieve functionalities including high-frequency current amplifiers, frequency modulators, photodetectors, and light-emitting diodes. Additionally, I will discuss ferroelectric and resistive memory electronics based on the defect interface characteristics formed between 2D materials or between 2D and 3D materials. These results suggest that 2D materials have great potential in realizing all-in-one device systems for future electronics.Two-dimensional materials exhibit atomic-level smoothness and clean interfaces, along with unique photoresponse characteristics. By stacking various 2D materials to form van der Waals heterostructures, additional degrees of freedom are provided for the integration of multifunctional devices. In the presentation, I will briefly introduce how a vertical hot electron transistor, based on a heterostructure formed by stacking multiple 2D materials, can achieve functionalities including high-frequency current amplifiers, frequency modulators, photodetectors, and light-emitting diodes. Additionally, I will discuss ferroelectric and resistive memory electronics based on the defect interface characteristics formed between 2D materials or between 2D and 3D materials. These results suggest that 2D materials have great potential in realizing all-in-one device systems for future electronics.
Place:S307, Gongguan Campus, NTNU
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