| Time：1130227 (Thes.) 13:20~16:10 Speaker：Kai-Shin Li (李愷信) Section Director, Device Fabrication and Integration Division, Taiwan Semiconductor Research Institute Title：Ferroelectric Memories & Beyond Abstract：Ferroelectric materials have been discovered for more than 50 years. They have been applied in various fields in terms of materials and products. However, in the field of semiconductor electronic, as electronic devices become smaller and smaller, the non-scalable properties of ferroelectric materials have become a bottleneck, and they have gradually disappeared from electronics. In the past decade, German scientist Dr. Müller discovered that by doping and metal stress, the structure of hafnium oxide, a common high-k gate material in semiconductors, can form a ferroelectric phase to produce ferroelectric properties. Since ferroelectric materials based on hafnium oxide have high scalability, ferroelectric research has once again attracted the attention of the semiconductor industry. It is also the hottest material in recent years. Place：S307, Gongguan Campus, NTNU |
