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1091-專題演講-1091216-邱博文（清華電機）
演講活動
張貼人：李明芳 ╱ 公告日期：2020-08-18|
Time：1091216 (Wed.) 14:20~16:20
Speaker：Prof.邱博文(CHIU, Po-Wen)
國立清華大學電機工程學系/Department of Electrical Engineering, National Tsing Hua University
Title：Electronic devices made of atomically thin 2D materials
Abstract：The most pressing barrier to the development of advanced electronics based on two-dimensional layered semiconductors like transition metal dichalcogenides (TMDs) stems from the lack of site-selective synthesis of complementary n- and p-channels with low contact resistance. It is important to design contacts such that the transmission is dictated by intrinsic properties of the TMD channel rather than by details of the contacts. In this talk, insight into the metal/TMD contacts will be given, with examples showing how the contact barrier is modulated by the work function of metals, defects, and contact geometry on “clean” surface of TMD. Graphene/TMD interface exhibits a transparent contact with a nearly ideal pinning factor for the both n- and p-channels. After addressing the contact issue, high-performance electronic and optoelectronic devices made of atomically thin 2D materials can be demonstrated.
Place：B101, Gongquan Campuses, NTNU
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最後修改時間：2020-12-11 AM 8:37
