:::

最新消息

:::

1071-專題演講-1071226-王偉華(中研院原分所)

演講活動
張貼人:李明芳公告日期:2018-09-03
 
Time12/26/2018 (Wed.) 14:20~16:20
SpeakerProf.王偉華(Wei-Hua Wang)
Institute of Atomic and Molecular Sciences, Academia Sinica
TitleHigh-performance 2D-semiconductor-based Field-effect Transistors
Abstract2D semiconducting materials have attracted widespread interests recently due to the potential for novel functionalities in nanoelectronics. Because of the atomically thin layer and excellent gate coupling, 2D semiconducting materials are attractive for lack of shortchannel effects which considerably lowers device performance. Moreover, the flexibility and transparency of the 2D semiconductor materials can offer opportunities for nextgeneration electronics. Among those 2D semiconductor materials, layered InSe is very attractive because it exhibits high carrier mobility, promising optoelectronic characteristics, and quantum transport behaviors. We have demonstrated a high-quality ohmic contact to layered InSe enabled with the nonrectifying barrier, resulting in highperformance InSe FEDs. The nonrectifying barrier at the contact to InSe can be realized by employing In as the contact metal and In interfacial layer as the interfacial layer owing to a favorable band alignment. With the optimized ohmic contact, we achieve distinguished transport characteristics of the InSe FEDs in two-terminal geometry, including high electron mobility, ohmic contact and high ON-current [1]. Alternatively, we report layered InSe FEDs with controlled oxidation of the surface layers. In most 2D materials, Fermi-level pinning effect is common and severely limits the tunability of the electrical transport properties. With the ultrathin oxide barrier, we successfully demonstrate a tunneling contact, which enabling Fermi level depinning effect and reduced Schottky barrier height to further enhance the controllability of InSe FEDs electronic characteristics [2].
References
[1] “High-performance InSe transistors with ohmic contact enabled by nonrectifying-barrier-type indium electrodes” Yu-Ting Huang, Yi-Hsun Chen, Yi-Ju Ho, Shih-Wei Huang, Yih-Ren Chang, Kenji Watanabe, Takashi Taniguchi, Hsiang-Chih Chiu, Chi-Te Liang, Raman Sankar, Fang-Cheng Chou, Chun-Wei Chen, and Wei-Hua Wang, ACS Applied Materials & Interfaces, 10 (39) (2018) P. 33450–33456
[2] “Fermi-level Depinning Effect in Indium Selenide Field-effect Transistors Enabled by Atomic-scale Surface Oxidation Interface” in preparation
PlaceConference Room (Basement), General Hall, Gongquan Campuses, NTNU


 
最後修改時間:2018-12-24 AM 8:30

1234

單位簡介

本系的重點研究領域包括:凝態物理、光電與奈米科學、高能與粒子物理、軟凝態物理與生物物理、原分子光學物理、及物理科學教育等。本系前身為臺灣省立師範學院理化系物理組,成立於民國三十五年(1946年)本校創校之始。民國五十一年(1962年)本系獨立成系,民國六十三年(1974年)成立物理研究所碩士班,民國八十年(1991年)成立研究所博士班。長久以來,本系肩負著培育臺灣中等學校物理科師資的重任,但也不忘在物理學術研究上求新求進步。至今本系培育出的學術人才已有一位中研院院士及近百位中研院研究員及大學教授,各行各業的高科技人材更是不勝枚舉。民國八十三年師資培育法改制後,本系已升級為尖端學術研究、科技應用研發、及中學師資培育三者齊備的系所。

  • 國立臺灣師範大學物理系系友會
  • 系友會線上小額捐款
  • 徐有庠盃-臺灣青年學生物理辯論競賽
  • 國際物理奧林匹亞競賽
  • BOSON CLUB
  • 公用場地與儀器設施預約系統
  • 學生實習專區
cron web_use_log