Time：1100224 (Wed.) 14:20~16:20

Speaker：Prof. 李連忠/LI, Lain-Jong (Lance Li)

香港大學機械工程系/Department of Mechanical Engineering, University of Hong Kong

Title：Materials Innovation for Future Electronics

Abstract：Internet of things demand further performance improvements in integrated circuit systems. Two approaches exist for in future IC fabrication. One is to continue the transistor scaling (Moore’s Law) with either new device architectures or using new materials with superior gate controllability [1]. Another approach is to construct three-dimensional integrated circuits (3D ICs) with monolithic integration; for example, adding sensor functionalities, or constructing upper-layer logic circuits or memory devices on CMOS Si wafers, or stacking logic with memory devices [2]. Therefore, the research on materials and processes compatible with the backend-of-line (BOEL) fabrication temperature (< 400 oC), is needed. Here, I like to discuss on few potential components for achieving monolithic 3D ICs including 2D layered semiconducting materials, and hexagonal boron nitride (hBN) insulators [3]. The detailed growth mechanism and growth strategy such as step edge epitaxy [4] for these 2D materials shall be discussed. These components enable the monolithic 3D integration.

References

[1] Li Ming-Yang et al. How 2D semiconductors could extend Moore’s law. Nature 567, 169 (2019)

[2] Deji Akinwande et al., 2D materials for Si technology. Nature 573, 507 (2019)

[3] Chen Tsu-An et al. Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111). Nature 579, 219 (2020)

[4] 11.A. Ajarb et al. Ledge-directed Epitaxy of Continuous, Self-Aligned and Monolayer TMDs Nanoribbons with Single Crystallinity, Nature Materials 19, 1300 (2020)

Place：B102, Gongquan Campuses, NTNU