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1091-專題演講-1090923-柯文政(台科大材料系)

演講活動
張貼人:李明芳公告日期:2020-08-18
  
Time1090923 (Wed.) 14:20~16:20
SpeakerProf.柯文政(KE, Wen-Cheng)
國立臺灣科技大學材料科學與工程系/Department of Materials Science and Engineering, National Taiwan University of Science and Technology
Title新穎藍寶石基板技術開發與其在半導體元件之應用/Development of novel sapphire substrates and its application in semiconductor devices
Abstract藍寶石基板具有高溫度穩定性及六角形排列晶格結構且價格低廉,已經廣泛運用三族氮化物元件結構磊晶之基板。然而,藍寶石基板與氮化鎵薄膜存在高晶格不匹配度,導致元件內部產生許多差排缺陷,元件性能大受影響。目前產業界主要使用圖案化藍寶石基板,藉由磊晶側向成長機制,降低差排缺陷密度。此外,圖案結構亦具有提升光萃取效率之功效,有效提升發光元件亮度。研究團隊進一步在微米尺度圖案藍寶石基板上加入凹槽形奈米圖案,開發新穎之微奈米複合圖案藍寶石基板,可再降低元件結構內差排缺陷及提升發光亮度。另一方面,石墨烯具有諸多優異材料物理特性且亦為六角形晶格排列,團隊亦在藍寶石基板上利用銅金屬催化技術成長複數層石墨烯薄膜,研究成果指出,石墨烯/藍寶石基板之使用可有效降低氮化鎵薄膜差排缺陷密度。微奈米複合圖案藍寶石基板及導入石墨烯界面層之新穎藍寶石基板為未來發展高功率三族氮化物元件極具發展潛力之基板。/The sapphire substrate exhibits a lot of benefits such as high thermal stability, high hardness, chemical inertness etc. In addition, the hexagonal lattice structure suitable used for epitaxy of group-III nitride devices. However, high lattice mismatch between GaN thin films and sapphire substrate result in a high density of threading dislocation which greatly degenerate the device performance. Currently, patterned sapphire substrates (PSSs) are widely used to decrease the threading dislocation density due to the generation of lateral growth mechanism during GaN epitaxial process. In addition, the light extraction efficiency of GaN based LEDs can also be improved using PSSs. Recently, our research group embeds a concave nanopattern on the conventional PSSs to develop a novel micro-nanoscale hybrid PSSs, which can further decrease threading dislocation density and improve the light emitting intensity of InGaN based LEDs. On the other hand, graphene has many excellent material and physical properties and also has a hexagonal lattice structure. Our research group try to embedded a multi-layer graphene interlayer between GaN thin films and sapphire substrate by using copper catalyst technique. Experimental results indicated that the threading dislocation density in GaN thin films can be decreased using graphene/sapphire substrate. The micro-nanoscale hybrid PSSs and the graphene/sapphire substrates are highly potential substrates for the development of high-power III-nitride devices in the future.
PlaceB101, Gongquan Campuses, NTNU

最後修改時間:2020-08-18 AM 9:32

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單位簡介

本系的重點研究領域包括:凝態物理、光電與奈米科學、高能與粒子物理、軟凝態物理與生物物理、原分子光學物理、及物理科學教育等。本系前身為臺灣省立師範學院理化系物理組,成立於民國三十五年(1946年)本校創校之始。民國五十一年(1962年)本系獨立成系,民國六十三年(1974年)成立物理研究所碩士班,民國八十年(1991年)成立研究所博士班。長久以來,本系肩負著培育臺灣中等學校物理科師資的重任,但也不忘在物理學術研究上求新求進步。至今本系培育出的學術人才已有一位中研院院士及近百位中研院研究員及大學教授,各行各業的高科技人材更是不勝枚舉。民國八十三年師資培育法改制後,本系已升級為尖端學術研究、科技應用研發、及中學師資培育三者齊備的系所。

  • 國立臺灣師範大學物理系系友會
  • 系友會線上小額捐款
  • 徐有庠盃-臺灣青年學生物理辯論競賽
  • 國際物理奧林匹亞競賽
  • BOSON CLUB
  • 公用場地與儀器設施預約系統
  • 學生實習專區
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